Symposium on Microelectronics

نویسندگان

  • Chien M. Ta
  • Fujiang Lin
  • Subhash R. Chander
چکیده

− Tunnel diode I-V characteristics were measured (Figure 1.) − Mathematical manipulations were then carried out on the measured data to roughly estimate the function that could be used to describe the I-V characteristic curves. − First model was proposed and revised until a rough match between the measured data and simulated data was obtained. − The final model is a voltage-controlled current source with three components describing the behavior of the TD in reverse bias, NDR, and large forward bias region, respectively.

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تاریخ انتشار 2005